-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTH240N15X4 | MOSFET N-CH 150V 240A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 940W (Tc) | 150V | 240A (Tc) | 4.4mOhm @ 120A, 10V | 10V | 4.5V @ 250µA | 195nC @ 10V | 8900pF @ 25V | ±20V | ||
| IXFH22N65X2 | MOSFET N-CH 650V 22A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 390W (Tc) | 650V | 22A (Tc) | 160mOhm @ 11A, 10V | 10V | 5.5V @ 1.5mA | 38nC @ 10V | 2310pF @ 25V | ±30V | HiPerFET™ | |
| IXTH140N075L2 | MOSFET N-CH | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 540W (Tc) | 75V | 140A (Tc) | 11mOhm @ 70A, 10V | 10V | 4.5V @ 250µA | 275nC @ 10V | 9300pF @ 25V | ±20V | Linear L2™ | |
| IXTH10N100D2 | MOSFET N-CH 1000V 10A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 695W (Tc) | 1000V | 10A (Tc) | Depletion Mode | 1.5Ohm @ 5A, 10V | 10V | 200nC @ 5V | 5320pF @ 25V | ±20V | ||
| IXFH80N65X2 | MOSFET N-CH 650V 80A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 890W (Tc) | 650V | 80A (Tc) | 40mOhm @ 40A, 10V | 10V | 5.5V @ 4mA | 143nC @ 10V | 8245pF @ 25V | ±30V | HiPerFET™ | |
| IXFH46N65X2 | MOSFET N-CH 650V 46A TO-247 | IXYS | TO-247 | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 660W (Tc) | 650V | 46A (Tc) | 76mOhm @ 23A, 10V | 10V | 5.5V @ 4mA | 75nC @ 10V | 4810pF @ 25V | ±30V | HiPerFET™ |
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