• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 212
  • IXFP3N80
    MOSFET N-CH 800V 3.6A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.6Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP24N15T
    MOSFET N-CH 150V 24A TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXFP220N06T3
    60V/220A TRENCHT3 HIPERFET MOSFE
    IXYS
    • Manufacturer: IXYS
    • Series: HiperFET™, TrenchT3™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 440W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP26N30X3
    300V/26A ULTRA JUNCTION X3-CLASS
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 500µA
    • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1.465nF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 170W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP1R6N50P
    MOSFET N-CH 500V 1.6A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 43W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP100N04T2
    MOSFET N-CH 40V 100A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2690pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP05N100P
    MOSFET N-CH 1000V 500MA TO-263
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
    • Rds On (Max) @ Id, Vgs: 30Ohm @ 250mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 196pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP05N100M
    MOSFET N-CH 1000V 700MA TO-220
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
    • Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 25W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP08N50D2
    MOSFET N-CH 500V 800MA TO220AB
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • FET Feature: Depletion Mode
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
    • Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
    • Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 60W (Tc)
    • Vgs (Max): ±20V
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  • IXTP1N100
    MOSFET N-CH 1000V 1.5A TO-220AB
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 11Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 54W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP10N60PM
    MOSFET N-CH 600V 5A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP1N80
    MOSFET N-CH 800V 750MA TO-220AB
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
    • Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 40W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP6N50P
    MOSFET N-CH 500V 6A TO-220
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTP2N100
    MOSFET N-CH 1000V 2A TO-220AB
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTP80N12T2
    DISCMSFT NCHTRENCHGATE-GEN2 TO-2
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 120V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 325W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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