Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS TO-220AB (IXFP)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 6
  • IXFP60N25X3
    MOSFET N-CH 250V 60A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 320W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP60N25X3M
    MOSFET N-CH 250V 60A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 36W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP80N25X3
    MOSFET N-CH 250V 80A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
    • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 390W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFP4N85X
    MOSFET N-CH 850V 3.5A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 150W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP14N85X
    MOSFET N-CH 850V 14A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 460W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFP8N85X
    MOSFET N-CH 850V 8A TO220AB
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB (IXFP)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 850V
    • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
    • Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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