• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 175
  • IXFN100N10S1
    MOSFET N-CH 100V 100A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 360W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN180N15P
    MOSFET N-CH 150V 150A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHT™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 90A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 680W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN320N17T2
    MOSFET N-CH 170V 260A SOT227
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 170V
    • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1070W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN27N120SK
    SICARBIDE-DISCRETE MOSFET SOT-22
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
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  • IXFN73N30Q
    MOSFET N-CH 300V 73A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 481W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN50N120SIC
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +20V, -5V
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  • IXTN46N50L
    MOSFET N-CH 500V 46A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
    • Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): ±30V
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  • IXFN180N07
    MOSFET N-CH 70V 180A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 70V
    • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
    • Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN210N30P3
    MOSFET N-CH 300V 192A SOT-227
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN260N17T
    MOSFET N-CH 170V 245A SOT-227
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 170V
    • Current - Continuous Drain (Id) @ 25°C: 245A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1090W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN170N30P
    MOSFET N-CH 300V 138A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 138A (Tc)
    • Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN140N30P
    MOSFET N-CH 300V 110A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 70A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN110N60P3
    MOSFET N-CH 600V 90A SOT227
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, Polar3™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 1500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFE48N50QD2
    MOSFET N-CH 500V 41A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 400W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN240N25X3
    MOSFET N-CH 250V 240A SOT227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 120A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 695W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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