• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 175
  • IXTN5N250
    MOSFET N-CH 2500V 5A SOT227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 2500V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFN48N50
    MOSFET N-CH 500V 48A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN44N50
    MOSFET N-CH 500V 44A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
    • Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTN170P10P
    MOSFET P-CH 100V 170A SOT227
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN70N120SK
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
    • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 15mA
    • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +20V, -5V
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  • IXFE24N100
    MOSFET N-CH 1000V 22A ISOPLUS227
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTN40P50P
    MOSFET P-CH 500V 40A SOT227
    IXYS
    • Manufacturer: IXYS
    • Series: PolarP™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN80N50Q2
    MOSFET N-CH 500V 80A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 890W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXUN350N10
    MOSFET N-CH 100V 350A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 175A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN60N60
    MOSFET N-CH 600V 60A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
    • Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 700W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFE180N20
    MOSFET N-CH 200V 158A ISOPLUS227
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
    • Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 500W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN360N10T
    MOSFET N-CH 100V 360A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 505nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 36000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 830W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN48N50U3
    MOSFET N-CH 500V 48A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXFN64N50PD3
    MOSFET N-CH 500V 52A SOT-227B
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 625W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTN90N25L2
    MOSFET N-CH 250V 90A SOT-227
    IXYS
    • Manufacturer: IXYS
    • Series: Linear L2™
    • Mounting Type: Chassis Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-227-4, miniBLOC
    • Supplier Device Package: SOT-227B
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 735W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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