Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS ISOPLUSi5-Pak™
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 4700V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 220W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
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- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 4500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 220W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
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- Manufacturer: IXYS
- Series: TrenchMV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 140A
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Power - Max: 150W
Info from the market- Total warehouses:
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- Offers with a price:
- Offers in stock:
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- Manufacturer: IXYS
- Series: Trench™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Power - Max: 150W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: TrenchMV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 112A
- Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
- Power - Max: 150W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: IXYS
- Series: HiPerFET™, PolarP2™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 520W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarP2™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 520W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: TrenchMV™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
- Power - Max: 150W
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarP2™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUSi5-Pak™
- Supplier Device Package: ISOPLUSi5-Pak™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 357W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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