Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS ISOPLUSi5-Pak™

Found: 9
  • MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4700V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 220W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 4500V 2A I5PAK
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4500V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 23Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 220W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET 2N-CH 55V 140A ISOPLUS I5
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 140A
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Power - Max: 150W
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  • MOSFET 2N-CH 100V 100A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: Trench™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 100A
    • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
    • Power - Max: 150W
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  • MOSFET 2N-CH 85V 112A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 112A
    • Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
    • Power - Max: 150W
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  • MOSFET N-CH 1000V 29A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
    • Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET N-CH 1200V 24A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
    • Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 520W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • MOSFET 2N-CH 75V 120A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 120A
    • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
    • Power - Max: 150W
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  • MOSFET N-CH 1200V 18A I5-PAK
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarP2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUSi5-Pak™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
    • Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 357W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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