Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS ISOPLUS i4-PAC™

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 38
  • FMM50-025TF
    MOSFET 2N-CH 250V 30A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 30A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
    • Power - Max: 125W
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  • FMD47-06KC5
    MOSFET N-CH 600V 47A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMM22-05PF
    MOSFET 2N-CH 500V 13A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, PolarHT™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 13A
    • Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
    • Power - Max: 132W
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  • IXFF24N100
    MOSFET N-CH 1000V 22A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5 (3 Leads)
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 390mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 8mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMD80-0045PS
    MOSFET N-CH 55V 150A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 110A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMP76-01T
    MOSFET N/P-CH
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N and P-Channel, Common Drain
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
    • Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
    • Power - Max: 89W, 132W
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  • FMM150-0075P
    MOSFET 2N-CH 75V 150A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 150A
    • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 120A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
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  • FMM60-02TF
    MOSFET 2N-CH 200V 33A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 33A
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
    • Power - Max: 125W
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  • IXTF1R4N450
    2500V TO 4500V VERY HI VOLT PWR
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5 (3 Leads)
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4500V
    • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 40Ohm @ 50mA, 10V
    • Vgs(th) (Max) @ Id: 6V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 190W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXKF40N60SCD1
    MOSFET N-CH 600V 38A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5 (3 Leads)
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMM300-0055P
    MOSFET 2N-CH 55V 300A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 300A
    • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 150A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
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  • IXTF6N200P3
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 2000V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 3A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 215W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTF250N075T
    MOSFET N-CH 75V 140A ISOPLUS I4
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMM75-01F
    MOSFET 2N-CH 100V 75A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 75A
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
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  • FMM65-015P
    MOSFET 2N-CH 150V 65A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 65A
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
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