• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 38
  • IXTF03N400
    MOSFET N-CH 4000V 300MA I4PAK
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5 (3 Leads)
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4000V
    • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
    • Rds On (Max) @ Id, Vgs: 300Ohm @ 150mA, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 70W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMD21-05QC
    MOSFET N-CH 500V 21A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMD40-06KC
    MOSFET N-CH 600V 38A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • FET Feature: Super Junction
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MKE11R600DCGFC
    MOSFET N-CH 600V 15A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 790µA
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTF280N055T
    MOSFET N-CH 55V 160A ISOPLUS I4
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
    • Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FDM15-06KC5
    MOSFET N-CH 600V 15A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
    • Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 790µA
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMP76-010T
    MOSFET N/P-CH 100V 62A/54A I4PAC
    IXYS
    • Manufacturer: IXYS
    • Series: Trench™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N and P-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 62A, 54A
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
    • Power - Max: 89W, 132W
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  • FDM47-06KC5
    MOSFET N-CH 600V 47A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: CoolMOS™, HiPerDyn™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
    • Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMP26-02P
    MOSFET N/P-CH 200V 26A/17A I4PAC
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N and P-Channel
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 26A, 17A
    • Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
    • Power - Max: 125W
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  • IXTF02N450
    MOSFET N-CH 4500V 0.2A I4PAK
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5 (3 Leads)
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 4500V
    • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
    • Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V
    • Vgs(th) (Max) @ Id: 6.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 78W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IXTF230N085T
    MOSFET N-CH 85V 130A ISOPLUS I4
    IXYS
    • Manufacturer: IXYS
    • Series: TrenchMV™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 85V
    • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250mA
    • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMM110-015X2F
    MOSFET 2N-CH 150V 53A I4-PAC
    IXYS
    • Manufacturer: IXYS
    • Series: GigaMOS™, HiPerFET™, TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 53A
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
    • Power - Max: 180W
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  • FDM21-05QC
    MOSFET N-CH 500V 21A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: i4-Pac™-5
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • FMM150-0075X2F
    MOSFET 2N-CH 75V 120A I4-PAC-5
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™, TrenchT2™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: 2 N-Channel (Dual) Asymmetrical
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 120A
    • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
    • Power - Max: 170W
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  • IXTF2N300P3
    MOSFET N-CH
    IXYS
    • Manufacturer: IXYS
    • Series: Polar™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: ISOPLUSi5-Pak™
    • Supplier Device Package: ISOPLUS i4-PAC™
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 3000V
    • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 160W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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