-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTF03N400 | MOSFET N-CH 4000V 300MA I4PAK | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 (3 Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 70W (Tc) | 4000V | 300mA (Tc) | 300Ohm @ 150mA, 10V | 10V | 4V @ 250µA | 16.3nC @ 10V | 435pF @ 25V | ±20V | |||
| FMD21-05QC | MOSFET N-CH 500V 21A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500V | 21A (Tc) | 220mOhm @ 15A, 10V | 10V | 4.5V @ 250µA | 95nC @ 10V | ±20V | |||||
| FMD40-06KC | MOSFET N-CH 600V 38A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600V | 38A (Tc) | Super Junction | 70mOhm @ 20A, 10V | 10V | 3.9V @ 2.7mA | 250nC @ 10V | ±20V | HiPerFET™ | |||
| MKE11R600DCGFC | MOSFET N-CH 600V 15A I4-PAC | IXYS | ISOPLUS i4-PAC™ | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600V | 15A (Tc) | 165mOhm @ 12A, 10V | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | CoolMOS™ | |||
| IXTF280N055T | MOSFET N-CH 55V 160A ISOPLUS I4 | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 55V | 160A (Tc) | 4mOhm @ 50A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | ±20V | TrenchMV™ | ||
| FDM15-06KC5 | MOSFET N-CH 600V 15A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600V | 15A (Tc) | 165mOhm @ 12A, 10V | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | CoolMOS™ | |||
| FMP76-010T | MOSFET N/P-CH 100V 62A/54A I4PAC | IXYS | ISOPLUS i4-PAC™ | 89W, 132W | Through Hole | i4-Pac™-5 | -55°C ~ 150°C (TJ) | N and P-Channel | 100V | 62A, 54A | Standard | 11mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | 5080pF @ 25V | Trench™ | ||||
| FDM47-06KC5 | MOSFET N-CH 600V 47A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 600V | 47A (Tc) | 45mOhm @ 44A, 10V | 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | ±20V | CoolMOS™, HiPerDyn™ | |||
| FMP26-02P | MOSFET N/P-CH 200V 26A/17A I4PAC | IXYS | ISOPLUS i4-PAC™ | 125W | Through Hole | i4-Pac™-5 | -55°C ~ 150°C (TJ) | N and P-Channel | 200V | 26A, 17A | Standard | 60mOhm @ 25A, 10V | 5V @ 250µA | 70nC @ 10V | 2720pF @ 25V | Polar™ | ||||
| IXTF02N450 | MOSFET N-CH 4500V 0.2A I4PAK | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 (3 Leads) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 78W (Tc) | 4500V | 200mA (Tc) | 750Ohm @ 10mA, 10V | 10V | 6.5V @ 250µA | 10.4nC @ 10V | 256pF @ 25V | ±20V | |||
| IXTF230N085T | MOSFET N-CH 85V 130A ISOPLUS I4 | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 200W (Tc) | 85V | 130A (Tc) | 5.3mOhm @ 50A, 10V | 10V | 4V @ 250mA | 187nC @ 10V | 9900pF @ 25V | ±20V | TrenchMV™ | ||
| FMM110-015X2F | MOSFET 2N-CH 150V 53A I4-PAC | IXYS | ISOPLUS i4-PAC™ | 180W | Through Hole | i4-Pac™-5 | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 150V | 53A | Standard | 20mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 8600pF @ 25V | GigaMOS™, HiPerFET™, TrenchT2™ | ||||
| FDM21-05QC | MOSFET N-CH 500V 21A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | Through Hole | i4-Pac™-5 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 500V | 21A (Tc) | 220mOhm @ 15A, 10V | 10V | 4.5V @ 250µA | 95nC @ 10V | ±20V | |||||
| FMM150-0075X2F | MOSFET 2N-CH 75V 120A I4-PAC-5 | IXYS | ISOPLUS i4-PAC™ | 170W | Through Hole | ISOPLUSi5-Pak™ | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) Asymmetrical | 75V | 120A | Standard | 5.8mOhm @ 100A, 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | HiPerFET™, TrenchT2™ | ||||
| IXTF2N300P3 | MOSFET N-CH | IXYS | ISOPLUS i4-PAC™ | Through Hole | ISOPLUSi5-Pak™ | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 160W (Tc) | 3000V | 1.6A (Tc) | 21Ohm @ 1A, 10V | 10V | 5V @ 250µA | 73nC @ 10V | 1890pF @ 25V | ±20V | Polar™ |
- 10
- 15
- 50
- 100