Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS Die

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 12
  • IXTD1R4N60P 11
    MOSFET N-CH 600V
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
    • Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFD14N100-8X
    MOSFET N-CHANNEL 1000V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Technology: MOSFET (Metal Oxide)
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  • IXFD80N20Q-8XQ
    MOSFET N-CHANNEL 200V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Technology: MOSFET (Metal Oxide)
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  • IXFD26N50Q-72
    MOSFET N-CHANNEL 500V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Technology: MOSFET (Metal Oxide)
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  • IXFD23N60Q-72
    MOSFET N-CHANNEL 600V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Technology: MOSFET (Metal Oxide)
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  • IXTD5N100A
    MOSFET N-CH 1000V 5A DIE
    IXYS
    • Manufacturer: IXYS
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
    • Technology: MOSFET (Metal Oxide)
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  • IXTD4N80P-3J
    MOSFET N-CH 800
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 800V
    • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.8A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 100W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFD80N10Q-8XQ
    MOSFET N-CHANNEL 100V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Technology: MOSFET (Metal Oxide)
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  • IXTD2N60P-1J
    MOSFET N-CH 600
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 56W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXFD40N30Q-72
    MOSFET N-CHANNEL 300V DIE
    IXYS
    • Manufacturer: IXYS
    • Series: HiPerFET™
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 300V
    • Technology: MOSFET (Metal Oxide)
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  • IXTD3N50P-2J
    MOSFET N-CH 500
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 2Ohm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 70W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IXTD3N60P-2J
    MOSFET N-CH 600
    IXYS
    • Manufacturer: IXYS
    • Series: PolarHV™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.9Ohm @ 1.5A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 70W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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