• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 3
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IXFZ140N25T MOSFET N-CH 250V 100A DE475 IXYS DE475 Surface Mount DE475 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 445W (Tc) 250V 100A (Tc) 17mOhm @ 60A, 10V 10V 5V @ 4mA 255nC @ 10V 19000pF @ 25V ±20V GigaMOS™ HiPerFET™
IXTZ550N055T2 MOSFET N-CH 55V 550A DE475 IXYS DE475 Surface Mount DE475 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 600W (Tc) 55V 550A (Tc) 1mOhm @ 100A, 10V 10V 4V @ 250µA 595nC @ 10V 40000pF @ 25V ±20V FRFET®, SupreMOS®
IXFZ520N075T2 MOSFET N-CH 75V 465A DE-475 IXYS DE475 Surface Mount DE475 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 600W (Tc) 75V 465A (Tc) 1.3mOhm @ 100A, 10V 10V 4V @ 8mA 545nC @ 10V 41000pF @ 25V ±20V GigaMOS™, TrenchT2™
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  • 15
  • 50
  • 100