-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Mounting Type
|
Package / Case
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|
MCB60P1200TLB-TRR | MCB60P1200TLB-TRR | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | ||
MCB20P1200LB-TRR | MCB20P1200LB-TRR | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | MCB20P1200LB | |
MCB30P1200LB-TUB | MCB30P1200LB-TUB | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | MCB30P1200LB | |
MCB30P1200LB-TRR | MCB30P1200LB-TRR | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | MCB30P1200LB | |
MCB40P1200LB-TRR | MCB40P1200LB-TRR | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 2 N-Channel (Dual) Common Source | 1200V (1.2kV) | 58A | Silicon Carbide (SiC) | MCB40P1200LB |
MCB60P1200TLB-TUB | MCB60P1200TLB-TUB | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | ||
MCB20P1200LB-TUB | MCB20P1200LB-TUB | IXYS | 9-SMPD-B | Surface Mount | 9-PowerSMD | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | Standard | MCB20P1200LB |
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