- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: IXYS
- Series: TrenchT2™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 360W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: CoolMOS™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS220™
- Supplier Device Package: ISOPLUS220™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: TrenchMV™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXTA)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 480W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: TrenchP™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247™-3
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 105A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 69500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1040W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±15V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Package / Case: TO-220-3, Short Tab
- Supplier Device Package: PLUS220
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 100W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: Die
- Supplier Device Package: Die
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 50W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Y3-Li
- Supplier Device Package: Y3-Li
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 680A
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 500A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: PolarHV™
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8820pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 625W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: HiPerFET™, PolarHT™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: ISOPLUS264™
- Supplier Device Package: ISOPLUS264™
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 625W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247™-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 700W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±30V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS
- Series: TrenchP™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXTA)
- FET Type: P-Channel
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 300W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±15V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100