Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single IXYS Integrated Circuits Division SOT-89-3
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: IXYS Integrated Circuits Division
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
- FET Type: N-Channel
- FET Feature: Depletion Mode
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.6W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs (Max): ±15V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
-
- Manufacturer: IXYS Integrated Circuits Division
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 125°C (TA)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
- FET Type: N-Channel
- FET Feature: Depletion Mode
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 1.1W (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs (Max): ±15V
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100