-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH4257DTRPBF | IRFH4257 - HEXFET POWER MOSFET | International Rectifier | Dual PQFN (5x4) | 25W, 28W | Surface Mount | 8-PowerVDFN | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 25V | 25A | Logic Level Gate | 3.4mOhm @ 25A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1321pF @ 13V | HEXFET® |
- 10
- 15
- 50
- 100