Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single International Rectifier Dual PQFN (5x4)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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Found: 1
  • IRFH4257DTRPBF
    IRFH4257 - HEXFET POWER MOSFET
    International Rectifier
    • Manufacturer: International Rectifier
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: Dual PQFN (5x4)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 25V
    • Current - Continuous Drain (Id) @ 25°C: 25A
    • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
    • Vgs(th) (Max) @ Id: 2.1V @ 35µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1321pF @ 13V
    • Power - Max: 25W, 28W
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