• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 2
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Mounting Type
Package / Case
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Series
IRFHE4250DTRPBF HEXFET POWER MOSFET International Rectifier 32-PQFN (6x6) 156W (Tc) Surface Mount 32-PowerVFQFN -55°C ~ 150°C (TJ) 2 N-Channel (Dual) 25V 86A (Tc), 303A (Tc) Standard 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V 2.1V @ 35µA, 2.1V @ 100µA 20nC @ 4.5V, 53nC @ 4.5V 1735pF @ 13V, 4765pF @ 13V HEXFET®
IRF3575DTRPBF IRF3575D - 20V-30V N-CHANNEL International Rectifier 32-PQFN (6x6) Surface Mount 32-PowerWFQFN 2 N-Channel (Dual) 25V 303A (Tc) Standard
  • 10
  • 15
  • 50
  • 100