-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7455TRPBF | MOSFET N-CH 30V 15A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 15A (Ta) | 7.5mOhm @ 15A, 10V | 2.8V, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | ±12V | HEXFET® | ||
| IRF7811TR | MOSFET N-CH 28V 14A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.5W (Ta) | 28V | 14A (Ta) | 11mOhm @ 15A, 4.5V | 4.5V | 1V @ 250µA | 23nC @ 5V | 1800pF @ 16V | ±12V | HEXFET® | ||
| IRF7101TRPBF | MOSFET 2N-CH 20V 3.5A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 3.5A | Logic Level Gate | 100mOhm @ 1.8A, 10V | 3V @ 250µA | 15nC @ 10V | 320pF @ 15V | HEXFET® | ||||
| IRF7842TRPBF | MOSFET N-CH 40V 18A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 18A (Ta) | 5mOhm @ 17A, 10V | 4.5V, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | ±20V | HEXFET® | ||
| IRF7459TR | MOSFET N-CH 20V 12A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 20V | 12A (Ta) | 9mOhm @ 12A, 10V | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2480pF @ 10V | ±12V | HEXFET® | ||
| IRF7422D2PBF | MOSFET P-CH 20V 4.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 20V | 4.3A (Ta) | Schottky Diode (Isolated) | 90mOhm @ 2.2A, 4.5V | 2.7V, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | ±12V | FETKY™ | |
| IRF7853TRPBF | MOSFET N-CH 100V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 100V | 8.3A (Ta) | 18mOhm @ 8.3A, 10V | 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | ±20V | HEXFET® | ||
| IRF7433 | MOSFET P-CH 12V 8.9A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 12V | 8.9A (Ta) | 24mOhm @ 8.7A, 4.5V | 1.8V, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | ±8V | HEXFET® | ||
| AUIRF7207QTR | MOSFET P-CH 20V 5.4A 8SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 20V | 5.4A (Ta) | 60mOhm @ 5.4A, 4.5V | 2.7V, 4.5V | 1.6V @ 250µA | 22nC @ 4.5V | 780pF @ 15V | ±12V | HEXFET® | ||
| IRF7403PBF | MOSFET N-CH 30V 8.5A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.5A (Ta) | 22mOhm @ 4A, 10V | 4.5V, 10V | 1V @ 250µA | 57nC @ 10V | 1200pF @ 25V | ±20V | HEXFET® | ||
| IRF8252TRPBF-1 | MOSFET N-CH 25V 25A | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 25V | 25A (Ta) | 2.7mOhm @ 25A, 10V | 4.5V, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 5305pF @ 13V | ±20V | HEXFET® | ||
| IRF7805ZPBF | MOSFET N-CH 30V 16A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 16A (Ta) | 6.8mOhm @ 16A, 10V | 4.5V, 10V | 2.25V @ 250µA | 27nC @ 4.5V | 2080pF @ 15V | ±20V | HEXFET® | ||
| IRF7854TRPBF | MOSFET N-CH 80V 10A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 80V | 10A (Ta) | 13.4mOhm @ 10A, 10V | 10V | 4.9V @ 100µA | 41nC @ 10V | 1620pF @ 25V | ±20V | HEXFET® | ||
| IRF7103TRPBF | MOSFET 2N-CH 50V 3A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 50V | 3A | Standard | 130mOhm @ 3A, 10V | 3V @ 250µA | 30nC @ 10V | 290pF @ 25V | HEXFET® | ||||
| SI4410DYTRPBF | MOSFET N-CH 30V 10A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 10A (Ta) | 13.5mOhm @ 10A, 10V | 4.5V, 10V | 1V @ 250µA | 45nC @ 10V | 1585pF @ 15V | ±20V | HEXFET® |
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