-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF8721GTRPBF | MOSFET N-CH 30V 14A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 14A (Ta) | 8.5mOhm @ 14A, 10V | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1040pF @ 15V | ±20V | HEXFET® | ||
| IRF7205PBF | MOSFET P-CH 30V 4.6A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Tc) | 30V | 4.6A (Ta) | 70mOhm @ 4.6A, 10V | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | 870pF @ 10V | ±20V | HEXFET® | ||
| IRF8707GPBF | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 11.9mOhm @ 11A, 10V | 4.5V, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | 760pF @ 15V | ±20V | HEXFET® | ||
| IRF7805PBF | MOSFET N-CH 30V 13A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13A (Ta) | 11mOhm @ 7A, 4.5V | 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | HEXFET® | |||
| IRF7241TRPBF | MOSFET P-CH 40V 6.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 40V | 6.2A (Ta) | 41mOhm @ 6.2A, 10V | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 3220pF @ 25V | ±20V | HEXFET® | ||
| IRF9956TRPBF | MOSFET 2N-CH 30V 3.5A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 3.5A | Logic Level Gate | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | HEXFET® | ||||
| IRF7821GTRPBF | MOSFET N-CH 30V 13.6A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13.6A (Ta) | 9.1mOhm @ 13A, 10V | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1010pF @ 15V | ±20V | HEXFET® | ||
| IRF7842PBF | MOSFET N-CH 40V 18A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 40V | 18A (Ta) | 5mOhm @ 17A, 10V | 4.5V, 10V | 2.25V @ 250µA | 50nC @ 4.5V | 4500pF @ 20V | ±20V | HEXFET® | ||
| IRF7404QTRPBF | MOSFET P-CH 20V 6.7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | P-Channel | 20V | 6.7A (Ta) | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | 1500pF @ 15V | HEXFET® | ||||||
| IRF7321D2TR | MOSFET P-CH 30V 4.7A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 30V | 4.7A (Ta) | Schottky Diode (Isolated) | 62mOhm @ 4.9A, 10V | 4.5V, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | ±20V | FETKY™ | |
| IRF7465 | MOSFET N-CH 150V 1.9A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 150V | 1.9A (Ta) | 280mOhm @ 1.14A, 10V | 10V | 5.5V @ 250µA | 15nC @ 10V | 330pF @ 25V | ±30V | HEXFET® | ||
| IRF7316QTRPBF | MOSFET 2P-CH 30V 4.9A 8SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2 P-Channel (Dual) | 30V | 4.9A | Logic Level Gate | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | ||||||
| IRF7307PBF | MOSFET N/P-CH 20V 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 20V | 5.2A, 4.3A | Logic Level Gate | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | HEXFET® | ||||
| IRF7811AVTRPBF | MOSFET N-CH 30V 10.8A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 10.8A (Ta) | 14mOhm @ 15A, 4.5V | 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | ±20V | HEXFET® | ||
| IRF7425TR | MOSFET P-CH 20V 15A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 20V | 15A (Ta) | 8.2mOhm @ 15A, 4.5V | 2.5V, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | 7980pF @ 15V | ±12V | HEXFET® |
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