• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 563
  • IRF8721GTRPBF
    MOSFET N-CH 30V 14A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
    • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7205PBF
    MOSFET P-CH 30V 4.6A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF8707GPBF
    MOSFET N-CH 30V 11A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
    • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7805PBF
    MOSFET N-CH 30V 13A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V
    • Vgs (Max): ±12V
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  • IRF7241TRPBF
    MOSFET P-CH 40V 6.2A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
    • Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF9956TRPBF
    MOSFET 2N-CH 30V 3.5A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 3.5A
    • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
    • Power - Max: 2W
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  • IRF7821GTRPBF
    MOSFET N-CH 30V 13.6A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 155°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
    • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7842PBF
    MOSFET N-CH 40V 18A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
    • Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
    • Vgs(th) (Max) @ Id: 2.25V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7404QTRPBF
    MOSFET P-CH 20V 6.7A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
    • Technology: MOSFET (Metal Oxide)
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  • IRF7321D2TR
    MOSFET P-CH 30V 4.7A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FETKY™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • FET Feature: Schottky Diode (Isolated)
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF7465
    MOSFET N-CH 150V 1.9A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 150V
    • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
    • Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±30V
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  • IRF7316QTRPBF
    MOSFET 2P-CH 30V 4.9A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4.9A
    • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
    • Power - Max: 2W
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  • IRF7307PBF
    MOSFET N/P-CH 20V 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N and P-Channel
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
    • Power - Max: 2W
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  • IRF7811AVTRPBF
    MOSFET N-CH 30V 10.8A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
    • Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1801pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V
    • Vgs (Max): ±20V
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  • IRF7425TR
    MOSFET P-CH 20V 15A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
    • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
    • Vgs(th) (Max) @ Id: 1.2V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
    • Vgs (Max): ±12V
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