-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7822PBF | MOSFET N-CH 30V 18A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 3.1W (Ta) | 30V | 18A (Ta) | 6.5mOhm @ 15A, 4.5V | 4.5V | 1V @ 250µA | 60nC @ 5V | 5500pF @ 16V | ±12V | HEXFET® | ||
| IRF7493PBF | MOSFET N-CH 80V 9.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Tc) | 80V | 9.3A (Tc) | 15mOhm @ 5.6A, 10V | 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | ±20V | HEXFET® | ||
| IRF7464TRPBF | MOSFET N-CH 200V 1.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 1.2A (Ta) | 730mOhm @ 720mA, 10V | 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | ±30V | HEXFET® | ||
| IRF5803D2PBF | MOSFET P-CH 40V 3.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2W (Ta) | 40V | 3.4A (Ta) | Schottky Diode (Isolated) | 112mOhm @ 3.4A, 10V | 4.5V, 10V | 3V @ 250µA | 37nC @ 10V | 1110pF @ 25V | ±20V | FETKY™ | |
| IRF7452QTRPBF | MOSFET N-CH 100V 4.5A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 100V | 4.5A (Ta) | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | HEXFET® | ||||||
| IRF7467 | MOSFET N-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 11A (Ta) | 12mOhm @ 11A, 10V | 2.8V, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | ±12V | HEXFET® | ||
| IRF7807D2TRPBF | MOSFET N-CH 30V 8.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 8.3A (Ta) | Schottky Diode (Isolated) | 25mOhm @ 7A, 4.5V | 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | FETKY™ | ||
| IRF8513PBF | MOSFET 2N-CH 30V 8A/11A 8-SOIC | Infineon Technologies | 8-SO | 1.5W, 2.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 175°C (TJ) | 2 N-Channel (Dual) | 30V | 8A, 11A | Logic Level Gate | 15.5mOhm @ 8A, 10V | 2.35V @ 25µA | 8.6nC @ 4.5V | 766pF @ 15V | |||||
| IRF7811A | MOSFET N-CH 28V 11.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 28V | 11A (Ta) | 10mOhm @ 11A, 10V | 4.5V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | ±12V | HEXFET® | ||
| IRF8113GTRPBF | MOSFET N-CH 30V 17.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 17.2A (Ta) | 5.6mOhm @ 17.2A, 10V | 4.5V, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | ±20V | HEXFET® | ||
| IRF7464PBF | MOSFET N-CH 200V 1.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 200V | 1.2A (Ta) | 730mOhm @ 720mA, 10V | 10V | 5.5V @ 250µA | 14nC @ 10V | 280pF @ 25V | ±30V | HEXFET® | ||
| AUIRF7478Q | MOSFET N-CH 60V 7A 8SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 60V | 7A (Ta) | 26mOhm @ 4.2A, 10V | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | HEXFET® | ||
| IRF7233TR | MOSFET P-CH 12V 9.5A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 12V | 9.5A (Ta) | 20mOhm @ 9.5A, 4.5V | 2.5V, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | ±12V | HEXFET® | ||
| IRF7304TR | MOSFET 2P-CH 20V 4.3A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 4.3A | Logic Level Gate | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | HEXFET® | ||||
| IRF8910TRPBF | MOSFET 2N-CH 20V 10A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 10A | Logic Level Gate | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | HEXFET® |
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