-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Technology
|
Operating Temperature
|
FET Type
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 94-3449 | MOSFET 2P-CH 55V 3.4A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 55V | 3.4A | Logic Level Gate | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | HEXFET® | ||||
| IRF8721TRPBF | MOSFET N-CH 30V 14A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 14A (Ta) | 8.5mOhm @ 14A, 10V | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1040pF @ 15V | ±20V | HEXFET® | ||
| IRF7821TR | MOSFET N-CH 30V 13.6A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13.6A (Ta) | 9.1mOhm @ 13A, 10V | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1010pF @ 15V | ±20V | HEXFET® | ||
| IRF7811ATR | MOSFET N-CH 28V 11.4A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 28V | 11A (Ta) | 10mOhm @ 11A, 10V | 4.5V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | ±12V | HEXFET® | ||
| IRF7311PBF | MOSFET 2N-CH 20V 6.6A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 6.6A | Logic Level Gate | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | HEXFET® | ||||
| IRF9956TR | MOSFET 2N-CH 30V 3.5A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 30V | 3.5A | Logic Level Gate | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | HEXFET® | ||||
| IRF7424TR | MOSFET P-CH 30V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 30V | 11A (Tc) | 13.5mOhm @ 11A, 10V | 4.5V, 10V | 2.5V @ 250µA | 110nC @ 10V | 4030pF @ 25V | ±20V | HEXFET® | ||
| IRF7201PBF | MOSFET N-CH 30V 7.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Tc) | 30V | 7.3A (Tc) | 30mOhm @ 7.3A, 10V | 4.5V, 10V | 1V @ 250µA | 28nC @ 10V | 550pF @ 25V | ±20V | HEXFET® | ||
| IRF7342PBF | MOSFET 2P-CH 55V 3.4A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 55V | 3.4A | Logic Level Gate | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | HEXFET® | ||||
| IRF7475PBF | MOSFET N-CH 12V 11A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 12V | 11A (Ta) | 15mOhm @ 8.8A, 4.5V | 2.8V, 4.5V | 2V @ 250µA | 19nC @ 4.5V | 1590pF @ 6V | ±12V | HEXFET® | ||
| IRF7488PBF | MOSFET N-CH 80V 6.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 2.5W (Ta) | 80V | 6.3A (Ta) | 29mOhm @ 3.8A, 10V | 10V | 4V @ 250µA | 57nC @ 10V | 1680pF @ 25V | ±20V | HEXFET® | |||
| IRF7809AV | MOSFET N-CH 30V 13.3A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta) | 30V | 13.3A (Ta) | 9mOhm @ 15A, 4.5V | 4.5V | 1V @ 250µA | 62nC @ 5V | 3780pF @ 16V | ±12V | HEXFET® | ||
| IRF7309TRPBF | MOSFET N/P-CH 30V 4A/3A 8SOIC | Infineon Technologies | 8-SO | 1.4W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | N and P-Channel | 30V | 4A, 3A | Standard | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | HEXFET® | ||||
| IRF9388TRPBF | MOSFET P-CH 30V 12A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 2.5W (Ta) | 30V | 12A (Ta) | 8.5mOhm @ 12A, 20V | 10V, 20V | 2.4V @ 25µA | 52nC @ 10V | 1680pF @ 25V | ±25V | HEXFET® | ||
| IRF7324TRPBF | MOSFET 2P-CH 20V 9A 8-SOIC | Infineon Technologies | 8-SO | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | 2 P-Channel (Dual) | 20V | 9A | Logic Level Gate | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | HEXFET® |
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