-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRFHM8363TR2PBF | MOSFET 2N-CH 30V 11A 8PQFN | Infineon Technologies | 8-PQFN-Dual (3.3x3.3) | 2.7W | Surface Mount | 8-PowerVDFN | 2 N-Channel (Dual) | 30V | 11A | Logic Level Gate | 14.9mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V |
IRFHM792TR2PBF | MOSFET 2N-CH 100V 2.3A 8PQFN | Infineon Technologies | 8-PQFN-Dual (3.3x3.3) | 2.3W | Surface Mount | 8-PowerVDFN | 2 N-Channel (Dual) | 100V | 2.3A | Standard | 195mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V |
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