Found: 83
  • MOSFET N-CH 20V 100A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 1.1V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 80V 22A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: FASTIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-VQFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 80V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
    • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.6V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2311pF @ 40V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET NCH 100V 58A PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
    • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 75V 13A 8-PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 75V
    • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
    • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 30V 27A PQFN5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • MOSFET N-CH 60V 16A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N-CH 40V 100A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerVDFN
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • MOSFET N CH 40V 85A PQFN 5X6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®, StrongIRFET™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-TQFN Exposed Pad
    • Supplier Device Package: 8-PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 3.9V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 78W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
    • Vgs (Max): ±20V
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