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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 1.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V
- Technology: MOSFET (Metal Oxide)
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- Manufacturer: Infineon Technologies
- Series: FASTIRFET™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-VQFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2311pF @ 40V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Series: Automotive, AEC-Q101, HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
- Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs (Max): ±20V
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-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
- Rds On (Max) @ Id, Vgs: 2.95mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 10V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs (Max): ±20V
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- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V
- Technology: MOSFET (Metal Oxide)
Info from the market- Total warehouses:
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-
- Manufacturer: Infineon Technologies
- Series: HEXFET®
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
- Technology: MOSFET (Metal Oxide)
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- Manufacturer: Infineon Technologies
- Series: HEXFET®, StrongIRFET™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 8-TQFN Exposed Pad
- Supplier Device Package: 8-PQFN (5x6)
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation (Max): 78W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs (Max): ±20V
Info from the market- Total warehouses:
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- Offers in stock:
- 10
- 15
- 50
- 100