-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
PTFA082201FV4R250XTMA1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 894MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.95A |
PTFA092201E V1 | FET RF 65V 960MHZ H-36260-2 | Infineon Technologies | H-36260-2 | 220W | 960MHz | 65V | 10µA | H-36260-2 | LDMOS | 18.5dB | 30V | 1.85A |
PTFA092201F V1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 960MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.5dB | 30V | 1.85A |
PTFA092201FV4XWSA1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 960MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.5dB | 30V | 1.85A |
PTFA092211ELV4R250XTMA1 | FET RF LDMOS 220W H33288-3 | Infineon Technologies | H-33288-2 | 220W | 940MHz | 65V | H-33288-2 | LDMOS | 18dB | 30V | 1.75A | |
PTFA082201EV4R250XTMA1 | FET RF 65V 894MHZ H-36260-2 | Infineon Technologies | H-36260-2 | 220W | 894MHz | 65V | 10µA | H-36260-2 | LDMOS | 18dB | 30V | 1.95A |
PTFA092201FV4R250XTMA1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 960MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18.5dB | 30V | 1.85A |
PTFA082201F V1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 894MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.95A |
PTFA072401ELV4XWSA1 | FET RF LDMOS 240W H33288-2 | Infineon Technologies | H-33288-2 | 220W | 765MHz | 65V | H-33288-2 | LDMOS | 19dB | 30V | 1.8A | |
PTFA072401ELV4R250XTMA1 | FET RF LDMOS 240W H33288-2 | Infineon Technologies | H-33288-2 | 220W | 765MHz | 65V | H-33288-2 | LDMOS | 19dB | 30V | 1.8A | |
PTFA082201E V1 | FET RF 65V 894MHZ H-36260-2 | Infineon Technologies | H-36260-2 | 220W | 894MHz | 65V | 10µA | H-36260-2 | LDMOS | 18dB | 30V | 1.95A |
PTFA082201FV4XWSA1 | IC FET RF LDMOS 220W H-37260-2 | Infineon Technologies | H-37260-2 | 220W | 894MHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 18dB | 30V | 1.95A |
PTFA092211ELV4XWSA1 | FET RF LDMOS 220W H33288-2 | Infineon Technologies | H-33288-2 | 220W | 940MHz | 65V | H-33288-2 | LDMOS | 18dB | 30V | 1.75A | |
PTFA082201EV4XWSA1 | FET RF 65V 894MHZ H-36260-2 | Infineon Technologies | H-36260-2 | 220W | 894MHz | 65V | 10µA | H-36260-2 | LDMOS | 18dB | 30V | 1.95A |
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