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  • Voltage - Rated
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    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 7734
  • IPLU300N04S4R8XTMA1
    MOSFET N-CH 40V 300A 8HSOF
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerSFN
    • Supplier Device Package: PG-HSOF-8-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
    • Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 230µA
    • Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 22945pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 429W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPA60R099C7XKSA1
    MOSFET N-CH 600V TO220-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ C7
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: PG-TO220-FP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
    • Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 490µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 33W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPP65R380C6XKSA1
    MOSFET N-CH 650V 10.6A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
    • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 320µA
    • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • BSO4410
    MOSFET N-CH 30V 11.1A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 42µA
    • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • DF23MR12W1M1B67BPSA1
    LOW POWER EASY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • SPB18P06PGATMA1
    MOSFET P-CH 60V 18.7A TO-263
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D²PAK (TO-263AB)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 81.1W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRL3302STRL
    MOSFET N-CH 20V 39A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 20V
    • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
    • Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
    • Vgs(th) (Max) @ Id: 700mV @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 57W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
    • Vgs (Max): ±10V
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  • IRFR825PBF
    MOSFET N-CH 500V 6A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 500V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.7A, 10V
    • Vgs(th) (Max) @ Id: 5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 119W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF9358TRPBF
    MOSFET 2P-CH 30V 9.2A 8SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: 2 P-Channel (Dual)
    • FET Feature: Logic Level Gate
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 9.2A
    • Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 25µA
    • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
    • Power - Max: 2W
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  • IRLR4343-701PBF
    MOSFET N-CH 55V 26A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-252-4, DPak (3 Leads + Tab)
    • Supplier Device Package: I-PAK (LF701)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
    • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 79W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • PTFA261301E V1
    IC FET RF LDMOS 130W H-30260-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: GOLDMOS®
    • Package / Case: 2-Flatpack, Fin Leads
    • Supplier Device Package: H-30260-2
    • Frequency: 2.68GHz
    • Voltage - Rated: 65V
    • Current - Test: 1.4A
    • Power - Output: 130W
    • Transistor Type: LDMOS
    • Gain: 13.5dB
    • Voltage - Test: 28V
    • Current Rating (Amps): 10µA
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  • IPP60R190C6XKSA1
    MOSFET N-CH 600V 20.2A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 630µA
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 151W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPP220N25NFDAKSA1
    MOSFET N-CH 250V 61A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 250V
    • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
    • Rds On (Max) @ Id, Vgs: 22mOhm @ 61A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 270µA
    • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7076pF @ 125V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 300W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF7471TR
    MOSFET N-CH 40V 10A 8-SOIC
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-SOIC (0.154", 3.90mm Width)
    • Supplier Device Package: 8-SO
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
    • Vgs(th) (Max) @ Id: 3V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
    • Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 20V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2.5W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • SPD50N03S2L06T
    MOSFET N-CH 30V 50A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 85µA
    • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 136W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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