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    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
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List Table
Found: 7734
  • IRF9530NSTRR
    MOSFET P-CH 100V 14A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
    • Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • BUZ30A
    MOSFET N-CH 200V 21A TO-220AB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: SIPMOS®
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3-1
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 200V
    • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
    • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF5800
    MOSFET P-CH 30V 4A 6-TSOP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: Micro6™(TSOP-6)
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
    • Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
    • Vgs(th) (Max) @ Id: 1V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IPS60R2K1CEAKMA1
    CONSUMER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • IPW90R800C3FKSA1
    MOSFET N-CH 900V 6.9A TO-247
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 460µA
    • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 104W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • AUIRFR5305TR
    MOSFET P-CH 55V 31A DPAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: D-Pak
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
    • Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
    • Technology: MOSFET (Metal Oxide)
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  • IPA65R600E6XKSA1
    MOSFET N-CH 650V 7.3A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-220-3 Full Pack
    • Supplier Device Package: PG-TO220-FP
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 650V
    • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
    • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 210µA
    • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 28W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPD85P04P4L06ATMA1
    MOSFET P-CH TO252-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101, OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3-313
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
    • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 85A, 10V
    • Vgs(th) (Max) @ Id: 2.2V @ 150µA
    • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 88W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±16V
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  • IPD60R1K4C6ATMA1
    MOSFET N-CH 600V 3.2A TO252-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolMOS™ C6
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Supplier Device Package: PG-TO252-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 600V
    • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
    • Vgs(th) (Max) @ Id: 3.5V @ 90µA
    • Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 28.4W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRFH8324TRPBF
    MOSFET N-CH 30V 90A 5X6 PQFN
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: PQFN (5x6)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.35V @ 50µA
    • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF3710STRLPBF
    MOSFET N-CH 100V 57A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
    • Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IPI80N06S2L11AKSA1
    MOSFET N-CH 55V 80A TO262-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
    • Supplier Device Package: PG-TO262-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 55V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 93µA
    • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 158W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • BSL303SPEH6327XTSA1
    MOSFET P-CH 30V 6.3A TSOP-6
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: OptiMOS™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Supplier Device Package: PG-TSOP-6-6
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
    • Rds On (Max) @ Id, Vgs: 33mOhm @ 6.3A, 10V
    • Vgs(th) (Max) @ Id: 2V @ 30µA
    • Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 2W (Ta)
    • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
    • Vgs (Max): ±20V
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  • IRF2204SPBF
    MOSFET N-CH 40V 170A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
    • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 200W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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  • IRF9540NSTRRPBF
    MOSFET P-CH 100V 23A D2PAK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: HEXFET®
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: D2PAK
    • FET Type: P-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
    • Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
    • Technology: MOSFET (Metal Oxide)
    • Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Vgs (Max): ±20V
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