• Manufacturer
  • Supplier Device Package
  • Power - Output
  • Voltage - Rated
    • Package / Case
    • Transistor Type
    • Technology
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    • FET Type
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    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 7734
Partnumber Description Manufacturer
Supplier Device Package
Power - Max
Power - Output
Mounting Type
Frequency
Voltage - Rated
Current Rating (Amps)
Package / Case
Transistor Type
Technology
Operating Temperature
FET Type
Gain
Noise Figure
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Voltage - Test
Current - Test
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
IPS04N03LA G MOSFET N-CH 25V 50A IPAK Infineon Technologies PG-TO251-3 Through Hole TO-251-3 Stub Leads, IPak MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 115W (Tc) 25V 50A (Tc) 4mOhm @ 50A, 10V 4.5V, 10V 2V @ 80µA 41nC @ 5V 5199pF @ 15V ±20V OptiMOS™
IRF7807VD2TR MOSFET N-CH 30V 8.3A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 30V 8.3A (Ta) Schottky Diode (Isolated) 25mOhm @ 7A, 4.5V 4.5V 1V @ 250µA 14nC @ 4.5V ±20V FETKY™
IRFR18N15DTRLP MOSFET N-CH 150V 18A DPAK Infineon Technologies D-Pak Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) N-Channel 150V 18A (Tc) 125mOhm @ 11A, 10V 5.5V @ 250µA 43nC @ 10V 900pF @ 25V HEXFET®
AUIRFR2407TRL MOSFET N-CH 75V 42A DPAK Infineon Technologies D-PAK (TO-252AA) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 110W (Tc) 75V 42A (Tc) 26mOhm @ 25A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V HEXFET®
IRFU9120N MOSFET P-CH 100V 6.6A I-PAK Infineon Technologies IPAK (TO-251) Through Hole TO-251-3 Short Leads, IPak, TO-251AA MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) P-Channel 40W (Tc) 100V 6.6A (Tc) 480mOhm @ 3.9A, 10V 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V ±20V HEXFET®
IRF7478PBF MOSFET N-CH 60V 7A 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 2.5W (Ta) 60V 7A (Ta) 26mOhm @ 4.2A, 10V 4.5V, 10V 3V @ 250µA 31nC @ 4.5V 1740pF @ 25V ±20V HEXFET®
IRFZ46NSTRL MOSFET N-CH 55V 53A D2PAK Infineon Technologies D2PAK Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 3.8W (Ta), 107W (Tc) 55V 53A (Tc) 16.5mOhm @ 28A, 10V 10V 4V @ 250µA 72nC @ 10V 1696pF @ 25V ±20V HEXFET®
SPI80N06S2-08 MOSFET N-CH 55V 80A I2PAK Infineon Technologies PG-TO262-3-1 Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 215W (Tc) 55V 80A (Tc) 8mOhm @ 58A, 10V 10V 4V @ 150µA 96nC @ 10V 3800pF @ 25V ±20V OptiMOS™
IPI50N12S3L15AKSA1 MOSFET N-CHANNEL_100+ Infineon Technologies
IPS031N03LGAKMA1 LV POWER MOS Infineon Technologies
IRF7426TR MOSFET N-CH 20V 8-SOIC Infineon Technologies 8-SO Surface Mount 8-SOIC (0.154", 3.90mm Width) MOSFET (Metal Oxide) N-Channel 20V HEXFET®
IPP90N04S402AKSA1 MOSFET N-CH 40V 90A TO220-3-1 Infineon Technologies PG-TO220-3-1 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 150W (Tc) 40V 90A (Tc) 2.5mOhm @ 90A, 10V 10V 4V @ 95µA 118nC @ 10V 9430pF @ 25V ±20V OptiMOS™
IPP65R125C7XKSA1 MOSFET N-CH 650V 18A TO220 Infineon Technologies PG-TO220-3 Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) N-Channel 101W (Tc) 650V 18A (Tc) 125mOhm @ 8.9A, 10V 10V 4V @ 440µA 35nC @ 10V 1670pF @ 400V ±20V CoolMOS™ C7
BF 1005SR E6327 MOSFET N-CH 8V 25MA SOT-143R Infineon Technologies PG-SOT-143R-3D 800MHz 8V 25mA SOT-143R N-Channel 22dB 1.6dB 5V
IRLB8743PBF MOSFET N-CH 30V 78A TO220AB Infineon Technologies TO-220AB Through Hole TO-220-3 MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) N-Channel 140W (Tc) 30V 78A (Tc) 3.2mOhm @ 40A, 10V 4.5V, 10V 2.35V @ 100µA 54nC @ 4.5V 5110pF @ 15V ±20V HEXFET®
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