- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Power - Output
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Technology
|
Operating Temperature
|
FET Type
|
Gain
|
Noise Figure
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Voltage - Test
|
Current - Test
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPA075N15N3GXKSA1 | MOSFET N-CH 150V 43A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 39W (Tc) | 150V | 43A (Tc) | 7.5mOhm @ 43A, 10V | 8V, 10V | 4V @ 270µA | 93nC @ 10V | 7280pF @ 75V | ±20V | OptiMOS™ | |||||||||||
| IRFS7730TRLPBF | MOSFET N-CH 75V 195A D2PAK | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 375W (Tc) | 75V | 195A (Tc) | 2.6mOhm @ 100A, 10V | 6V, 10V | 3.7V @ 250µA | 407nC @ 10V | 13660pF @ 25V | ±20V | HEXFET®, StrongIRFET™ | |||||||||||
| IPP50R299CPHKSA1 | MOSFET N-CH 550V TO220-3 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 104W (Tc) | 550V | 12A (Tc) | 299mOhm @ 6.6A, 10V | 10V | 3.5V @ 440µA | 31nC @ 10V | 1190pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| IRLL2703TR | MOSFET N-CH 30V 3.9A SOT223 | Infineon Technologies | SOT-223 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1W (Ta) | 30V | 3.9A (Ta) | 45mOhm @ 3.9A, 10V | 4V, 10V | 2.4V @ 250µA | 14nC @ 5V | 530pF @ 25V | ±16V | HEXFET® | |||||||||||
| AUIRLSL3036 | MOSFET N-CH 60V 270A TO262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 380W (Tc) | 60V | 195A (Tc) | 2.4mOhm @ 165A, 10V | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | HEXFET® | |||||||||||
| IRF6722MTR1PBF | MOSFET N-CH 30V 13A DIRECTFET | Infineon Technologies | DIRECTFET™ MP | Surface Mount | DirectFET™ Isometric MP | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 2.3W (Ta), 42W (Tc) | 30V | 13A (Ta), 56A (Tc) | 7.7mOhm @ 13A, 10V | 4.5V, 10V | 2.4V @ 50µA | 17nC @ 4.5V | 1300pF @ 15V | ±20V | HEXFET® | |||||||||||
| IPB039N04LGATMA1 | MOSFET N-CH 40V 80A TO263-3 | Infineon Technologies | D²PAK (TO-263AB) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 3.9mOhm @ 80A, 10V | 4.5V, 10V | 2V @ 45µA | 78nC @ 10V | 6100pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IRF3415S | MOSFET N-CH 150V 43A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 200W (Tc) | 150V | 43A (Tc) | 42mOhm @ 22A, 10V | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | HEXFET® | |||||||||||
| IPP60R099C6XKSA1 | MOSFET N-CH 600V 37.9A TO220 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 278W (Tc) | 600V | 37.9A (Tc) | 99mOhm @ 18.1A, 10V | 10V | 3.5V @ 1.21mA | 119nC @ 10V | 2660pF @ 100V | ±20V | CoolMOS™ | |||||||||||
| BSS84PL6433HTMA1 | MOSFET P-CH 60V 170MA SOT-23 | Infineon Technologies | SOT-23-3 | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | P-Channel | 360mW (Ta) | 60V | 170mA (Ta) | 8Ohm @ 170mA, 10V | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19pF @ 25V | ±20V | SIPMOS® | |||||||||||
| IPB80N08S406ATMA1 | MOSFET N-CH 75V 80A TO263-3 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 150W (Tc) | 80V | 80A (Tc) | 5.5mOhm @ 80A, 10V | 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | ±20V | Automotive, AEC-Q101, OptiMOS™ | |||||||||||
| IRF9520NSPBF | MOSFET P-CH 100V 6.8A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | P-Channel | 3.8W (Ta), 48W (Tc) | 100V | 6.8A (Tc) | 480mOhm @ 4A, 10V | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | HEXFET® | |||||||||||
| SPP42N03S2L-13 | MOSFET N-CH 30V 42A TO-220AB | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 83W (Tc) | 30V | 42A (Tc) | 12.9mOhm @ 21A, 10V | 4.5V, 10V | 2V @ 37µA | 30.5nC @ 10V | 1130pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| BSP135H6906XTSA1 | MOSFET N-CH 600V 120MA SOT223 | Infineon Technologies | PG-SOT223-4 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.8W (Ta) | 600V | 120mA (Ta) | Depletion Mode | 45Ohm @ 120mA, 10V | 0V, 10V | 1V @ 94µA | 4.9nC @ 5V | 146pF @ 25V | ±20V | SIPMOS® | ||||||||||
| AUIRFB3806 | MOSFET N-CH 60V 43A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 71W (Tc) | 60V | 43A (Tc) | 15.8mOhm @ 25A, 10V | 10V | 4V @ 50µA | 30nC @ 10V | 1150pF @ 50V | ±20V | HEXFET® |
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