• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: PG-TO220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 43A, 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 75V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 39W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®, StrongIRFET™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 375W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 104W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
• Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs (Max): ±16V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package: TO-262
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 380W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±16V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: DirectFET™ Isometric MP
• Supplier Device Package: DIRECTFET™ MP
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
• Rds On (Max) @ Id, Vgs: 7.7mOhm @ 13A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D²PAK (TO-263AB)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 2V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 94W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: CoolMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
• Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
• Gate Charge (Qg) (Max) @ Vgs: 119nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 278W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 360mW (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: Automotive, AEC-Q101, OptiMOS™
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 150W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: OptiMOS™
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
• Vgs(th) (Max) @ Id: 2V @ 37µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 83W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: SIPMOS®
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4
• FET Type: N-Channel
• FET Feature: Depletion Mode
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
• Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
• Vgs(th) (Max) @ Id: 1V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 1.8W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs (Max): ±20V

• Manufacturer: Infineon Technologies
• Series: HEXFET®
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
• Technology: MOSFET (Metal Oxide)
• Power Dissipation (Max): 71W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs (Max): ±20V