- Производитель
- Тип корпуса
- Выходная мощность
- Номинальное напряжение
-
- Package / Case
- Тип транзистора
- Технология
- Рабочая температура
- Тип канала
- Усиление
- Коэффициент шума
- Рассеиваемая мощность (Макс)
- Напряжение сток-исток (Vdss)
- Voltage - Test
- Current - Test
- Непрерывный ток стока (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Пороговое напряжение затвора (Max) @ Id
- Заряд затвора (Qg) (Max) @ Vgs
- Входная емкость (Ciss) (Max) @ Vds
- Напряжение затвора (макс)
- Серия
| Наименование | Описание | Производитель
|
Тип корпуса
|
Мощность - Макс.
|
Выходная мощность
|
Вид монтажа
|
Частота
|
Номинальное напряжение
|
Номинальный ток
|
Package / Case
|
Тип транзистора
|
Технология
|
Рабочая температура
|
Тип канала
|
Усиление
|
Коэффициент шума
|
Рассеиваемая мощность (Макс)
|
Напряжение сток-исток (Vdss)
|
Voltage - Test
|
Current - Test
|
Непрерывный ток стока (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Пороговое напряжение затвора (Max) @ Id
|
Заряд затвора (Qg) (Max) @ Vgs
|
Входная емкость (Ciss) (Max) @ Vds
|
Напряжение затвора (макс)
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPSA70R750P7SAKMA1 | MOSFET COOLMOS 700V TO251-3 | Infineon Technologies | PG-TO251-3 | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | N-Channel | 34.7W (Tc) | 700V | 6.5A (Tc) | 750mOhm @ 1.4A, 10V | 10V | 3.5V @ 70µA | 8.3nC @ 400V | 306pF @ 400V | ±16V | CoolMOS™ P7 | |||||||||||
| IRF5805 | MOSFET P-CH 30V 3.8A 6-TSOP | Infineon Technologies | Micro6™(TSOP-6) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | P-Channel | 2W (Ta) | 30V | 3.8A (Ta) | 98mOhm @ 3.8A, 10V | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 10V | 511pF @ 25V | ±20V | HEXFET® | ||||||||||||
| SPB100N03S2-03 G | MOSFET N-CH 30V 100A D2PAK | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 30V | 100A (Tc) | 3mOhm @ 80A, 10V | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IPP80N06S3L-08 | MOSFET N-CH 55V 80A TO-220 | Infineon Technologies | PG-TO220-3-1 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 105W (Tc) | 55V | 80A (Tc) | 7.9mOhm @ 43A, 10V | 5V, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | ±16V | OptiMOS™ | |||||||||||
| PTFA190451FV4R250XTMA1 | IC FET RF LDMOS 45W H-37265-2 | Infineon Technologies | H-37265-2 | 11W | 1.96GHz | 65V | 10µA | 2-Flatpack, Fin Leads, Flanged | LDMOS | 17.5dB | 28V | 450mA | |||||||||||||||||
| IRF3805PBF | MOSFET N-CH 55V 75A TO-220AB | Infineon Technologies | TO-220AB | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 300W (Tc) | 55V | 75A (Tc) | 3.3mOhm @ 75A, 10V | 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | ±20V | HEXFET® | |||||||||||
| BUZ73HXKSA1 | MOSFET N-CH 200V 7A TO220-3 | Infineon Technologies | PG-TO220-3 | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 40W (Tc) | 200V | 7A (Tc) | 400mOhm @ 4.5A, 10V | 10V | 4V @ 1mA | 530pF @ 25V | ±20V | SIPMOS® | ||||||||||||
| IRL3303D1STRL | MOSFET N-CH 30V 38A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 68W (Tc) | 30V | 38A (Tc) | 26mOhm @ 20A, 10V | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | HEXFET® | |||||||||||
| SPN02N60S5 | MOSFET N-CH 600V 0.4A SOT-223 | Infineon Technologies | PG-SOT223-4 | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 1.8W (Ta) | 600V | 400mA (Ta) | 3Ohm @ 1.1A, 10V | 10V | 5.5V @ 80µA | 7.4nC @ 10V | 250pF @ 25V | ±20V | CoolMOS™ | |||||||||||
| IRL1404ZSPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | D2PAK | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 230W (Tc) | 40V | 75A (Tc) | 3.1mOhm @ 75A, 10V | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | HEXFET® | |||||||||||
| IPB80N04S403ATMA1 | MOSFET N-CH 40V 80A TO263-3-2 | Infineon Technologies | PG-TO263-3-2 | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 94W (Tc) | 40V | 80A (Tc) | 3.3mOhm @ 80A, 10V | 10V | 4V @ 53µA | 66nC @ 10V | 5260pF @ 25V | ±20V | OptiMOS™ | |||||||||||
| IRF7494TR | MOSFET N-CH 150V 5.2A 8-SOIC | Infineon Technologies | 8-SO | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | N-Channel | 150V | 5.2A (Ta) | 44mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | HEXFET® | |||||||||||||||
| IRF6720S2TRPBF | MOSFET N-CH 30V 11A DIRECTFET-S1 | Infineon Technologies | DIRECTFET S1 | Surface Mount | DirectFET™ Isometric S1 | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 1.7W (Ta), 17W (Tc) | 30V | 11A (Ta), 35A (Tc) | 8mOhm @ 11A, 10V | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1140pF @ 15V | ±20V | HEXFET® | |||||||||||
| IRLZ44NLPBF | MOSFET N-CH 55V 47A TO-262 | Infineon Technologies | TO-262 | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | N-Channel | 3.8W (Ta), 110W (Tc) | 55V | 47A (Tc) | 22mOhm @ 25A, 10V | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | HEXFET® | |||||||||||
| BSC031N06NS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | Infineon Technologies | PG-TDSON-8-1 | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | N-Channel | 2.5W (Ta), 139W (Tc) | 60V | 100A (Tc) | 3.1mOhm @ 50A, 10V | 10V | 4V @ 93µA | 130nC @ 10V | 11000pF @ 30V | ±20V | OptiMOS™ |
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