Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single Goford Semiconductor 8-DFN (4.9x5.75)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 2
  • G20N06D52
    N60V,RD(MAX)<30M@10V,RD(MAX)<40M
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 30V
    • Power - Max: 45W (Ta)
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  • GT090N06D52
    N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
    Goford Semiconductor
    • Manufacturer: Goford Semiconductor
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • FET Type: 2 N-Channel (Dual)
    • FET Feature: Standard
    • Drain to Source Voltage (Vdss): 60V
    • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
    • Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
    • Vgs(th) (Max) @ Id: 2.4V @ 250µA
    • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 30V
    • Power - Max: 62W (Tc)
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