Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single GeneSiC Semiconductor SOT-227
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- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
- Technology: SiC (Silicon Carbide Junction Transistor)
- Power Dissipation (Max): 535W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 100A
- Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V
- Technology: SiC (Silicon Carbide Junction Transistor)
- Power Dissipation (Max): 535W (Tc)
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100