• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 61
Partnumber Description Manufacturer
Supplier Device Package
Mounting Type
Package / Case
Technology
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Series
EPC2100 GAN TRANS ASYMMETRICAL HALF BRID EPC Die Surface Mount Die -40°C ~ 150°C (TJ) 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) GaNFET (Gallium Nitride) 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V eGaN®
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