• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 61
  • EPC2100
    GAN TRANS ASYMMETRICAL HALF BRID
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: GaNFET (Gallium Nitride)
    • Drain to Source Voltage (Vdss): 30V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
    • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
    • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
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