Semiconductors, Transistors, Transistors - FETs, MOSFETs - Single EPC Die Outline (5-Solder Bar)

    • Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 4
  • EPC2014
    GANFET TRANS 40V 10A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
    Info from the market
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  • EPC2007
    GANFET TRANS 100V 6A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 125°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -5V
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  • EPC2014C
    GANFET TRANS 40V 10A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 40V
    • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
    • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • EPC2007C
    GANFET TRANS 100V 6A BUMPED DIE
    EPC
    • Manufacturer: EPC
    • Series: eGaN®
    • Mounting Type: Surface Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Die
    • Supplier Device Package: Die Outline (5-Solder Bar)
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
    • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V
    • Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
    • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
    • Technology: GaNFET (Gallium Nitride)
    • Drive Voltage (Max Rds On, Min Rds On): 5V
    • Vgs (Max): +6V, -4V
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  • 10
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  • 50
  • 100