-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PJT7808_R2_00001 | MOSFET 2N-CH 20V 500MA SOT-363 | EMO Inc. | SOT-363 | 350mW (Ta) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | -55°C ~ 150°C (TJ) | 2 N-Channel (Dual) | 20V | 500mA (Ta) | Standard | 400mOhm @ 500mA, 4.5V | 900mV @ 250µA | 1.4nC @ 4.5V | 10V |
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