-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
| Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GTRA362002FC-V1-R0 | 200W, GAN HEMT, 48V, 3400-3600MH | Cree/Wolfspeed | H-37248C-4 | 200W | 3.4GHz ~ 3.6GHz | 125V | H-37248C-4 | HEMT | 13.5dB | 48V | 140mA | GaN | |
| PTVA102001EA-V1-R0 | RF MOSFET TRANSISTORS | Cree/Wolfspeed | H-36265-2 | 200W | 960MHz ~ 1.6GHz | 105V | 10µA | H-36265-2 | LDMOS | 18.5dB | 50V | 100mA | |
| CGHV22200F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 200W | 1.8GHz ~ 2.2GHz | 125V | 12A | 440162 | HEMT | 18dB | 50V | 1A | GaN |
| CGHV27200F | RF MOSFET HEMT 50V 440162 | Cree/Wolfspeed | 440162 | 200W | 2.5GHz ~ 2.7GHz | 50V | 12A | 440162 | HEMT | 15dB ~ 16dB | 50V | 1A | GaN |
| CGHV50200F | RF MOSFET HEMT 40V 440217 | Cree/Wolfspeed | 440217 | 200W | 5GHz | 125V | 17A | 440217 | HEMT | 11.8dB | 40V | 1A | GaN |
| GTRA362002FC-V1-R2 | 200W, GAN HEMT, 48V, 3400-3600MH | Cree/Wolfspeed | H-37248C-4 | 200W | 3.4GHz ~ 3.6GHz | 125V | H-37248C-4 | HEMT | 13.5dB | 48V | 140mA | GaN |
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