- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: Die
- Supplier Device Package: Die
- Frequency: 18GHz
- Voltage - Rated: 100V
- Current - Test: 120mA
- Power - Output: 25W
- Transistor Type: HEMT
- Gain: 17dB
- Voltage - Test: 40V
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- Manufacturer: Cree/Wolfspeed
- Series: Z-FET™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: Die
- Supplier Device Package: Die
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 313mW (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs (Max): +25V, -5V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.4GHz
- Voltage - Rated: 65V
- Current - Test: 120mA
- Power - Output: 50W
- Transistor Type: LDMOS
- Gain: 14.3dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248G-4/2
- Supplier Device Package: H-37248G-4/2
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 900mA
- Power - Output: 170W
- Transistor Type: LDMOS
- Gain: 18dB
- Voltage - Test: 28V
- Current Rating (Amps): 10µA
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-
- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440199
- Supplier Device Package: 440199
- Frequency: 0Hz ~ 2.5GHz
- Voltage - Rated: 84V
- Current - Test: 2A
- Power - Output: 220W
- Transistor Type: HEMT
- Gain: 19dB
- Voltage - Test: 28V
- Current Rating (Amps): 56A
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: TO-263-7
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 113.6W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +15V, -4V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440193
- Supplier Device Package: 440193
- Frequency: 2.9GHz ~ 3.5GHz
- Voltage - Rated: 125V
- Current - Test: 500mA
- Power - Output: 170W
- Transistor Type: HEMT
- Gain: 13.3dB
- Voltage - Test: 50V
- Current Rating (Amps): 12A
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-33288-6
- Supplier Device Package: H-33288-6
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.2A
- Power - Output: 32W
- Transistor Type: LDMOS
- Gain: 18dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 4818pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 469W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +15V, -4V
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- Manufacturer: Cree/Wolfspeed
- Series: Z-Rec®
- Operating Temperature: 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
- Vgs(th) (Max) @ Id: 4V @ 105mA
- Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
- Power - Max: 3000W
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 83W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): ±15V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.69GHz
- Voltage - Rated: 65V
- Current - Test: 280mA
- Power - Output: 28W
- Transistor Type: LDMOS
- Gain: 15dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.4GHz
- Voltage - Rated: 65V
- Current - Test: 360mA
- Power - Output: 28W
- Transistor Type: LDMOS
- Gain: 16.5dB
- Voltage - Test: 28V
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- Offers in stock:
- 10
- 15
- 50
- 100