- Manufacturer
- Supplier Device Package
- Power - Output
- Voltage - Rated
-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
-
- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 113.6W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +19V, -8V
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- Manufacturer: Cree/Wolfspeed
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 92mA
- Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.2GHz
- Voltage - Rated: 65V
- Current - Test: 240mA
- Power - Output: 16W
- Transistor Type: LDMOS
- Gain: 17dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37275-6/2
- Supplier Device Package: H-37275-6/2
- Frequency: 1.88GHz
- Voltage - Rated: 65V
- Current - Test: 2.6A
- Power - Output: 80W
- Transistor Type: LDMOS
- Gain: 17dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: Module
- Supplier Device Package: Module
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 450A
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 132mA
- Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
- Power - Max: 850W
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440210
- Supplier Device Package: 440210
- Frequency: 7.9GHz ~ 9.6GHz
- Voltage - Rated: 100V
- Current - Test: 500mA
- Power - Output: 70W
- Transistor Type: HEMT
- Gain: 10dB
- Voltage - Test: 40V
- Current Rating (Amps): 6A
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- Manufacturer: Cree/Wolfspeed
- Series: GaN
- Package / Case: 440162
- Supplier Device Package: 440162
- Frequency: 1.2GHz ~ 1.4GHz
- Voltage - Rated: 125V
- Current - Test: 500mA
- Power - Output: 330W
- Transistor Type: HEMT
- Gain: 18dB
- Voltage - Test: 50V
- Current Rating (Amps): 42mA
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- Manufacturer: Cree/Wolfspeed
- Series: C3M™
- Mounting Type: Through Hole
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3357pF @ 1000V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 283W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +15V, -4V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-33288-6
- Supplier Device Package: H-33288-6
- Frequency: 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 1.85A
- Power - Output: 55W
- Transistor Type: LDMOS
- Gain: 18.1dB
- Voltage - Test: 30V
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- Manufacturer: Cree/Wolfspeed
- Series: Automotive, AEC-Q101, E
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- FET Type: N-Channel
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
- Technology: SiCFET (Silicon Carbide)
- Power Dissipation (Max): 97W (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs (Max): +18V, -8V
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 2.69GHz
- Voltage - Rated: 65V
- Current - Test: 85mA
- Power - Output: 5W
- Transistor Type: LDMOS
- Gain: 15.7dB
- Voltage - Test: 28V
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- Manufacturer: Cree/Wolfspeed
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- Manufacturer: Cree/Wolfspeed
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
- Frequency: 746MHz ~ 960MHz
- Voltage - Rated: 105V
- Power - Output: 351.5W
- Transistor Type: LDMOS (Dual), Common Source
- Gain: 23dB
- Current Rating (Amps): 10µA
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- Manufacturer: Cree/Wolfspeed
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- Offers in stock:
- 10
- 15
- 50
- 100