• Package / Case
    • Transistor Type
    • Technology
    • Operating Temperature
    • FET Type
    • Gain
    • Noise Figure
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Voltage - Test
    • Current - Test
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Series
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List Table
Found: 407
  • C3M0021120K
    1200V, 21 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4L
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 4818pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 469W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • CAS325M12HM2
    MOSFET 2N-CH 1200V 444A MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-Rec®
    • Operating Temperature: 175°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
    • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 400A, 20V
    • Vgs(th) (Max) @ Id: 4V @ 105mA
    • Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
    • Power - Max: 3000W
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  • C3M0120100K
    MOSFET N-CH 1000V 22A TO247-4L
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-4
    • Supplier Device Package: TO-247-4L
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
    • Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 3mA
    • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 83W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): ±15V
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  • C3M0065100J
    MOSFET N-CH 1000V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1000V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.5W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0021120D
    1200V, 21 MOHM, G3 SIC MOSFET
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -40°C ~ 175°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
    • Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
    • Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 4818pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 469W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +15V, -4V
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  • C3M0280090J-TR
    MOSFET N-CH 900V 11A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 50W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • CAS300M12BM2
    MOSFET 2N-CH 1200V 404A MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Chassis Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Module, Screw Terminals
    • Supplier Device Package: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
    • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 300A, 20V
    • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
    • Power - Max: 1660W
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  • CCS020M12CM2
    MOSFET 6N-CH 1200V 29.5A MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-Rec®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • FET Type: 6 N-Channel (3-Phase Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1200V (1.2kV)
    • Current - Continuous Drain (Id) @ 25°C: 29.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
    • Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
    • Power - Max: 167W
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  • C3M0075120D
    MOSFET 1200V, 75 MOHM, G3 SIC
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1200V
    • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
    • Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 4V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113.6W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • E3M0280090D
    E-SERIES 900V, 280 MOHM, G3 SIC
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Automotive, AEC-Q101, E
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 54W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0065090J-TR
    MOSFET N-CH 900V 35A D2PAK-7
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
    • Supplier Device Package: D2PAK-7
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 2.1V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 113W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +19V, -8V
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  • E3M0065090D
    E-SERIES 900V, 65 MOHM, G3 SIC M
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Automotive, AEC-Q101, E
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
    • Rds On (Max) @ Id, Vgs: 84.5mOhm @ 20A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 5mA
    • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 125W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C3M0280090D
    MOSFET N-CH 900V 11.5A
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: C3M™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 900V
    • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
    • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
    • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 54W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 15V
    • Vgs (Max): +18V, -8V
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  • C2M1000170D
    MOSFET N-CH 1700V 4.9A TO247
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-FET™
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247-3
    • FET Type: N-Channel
    • Drain to Source Voltage (Vdss): 1700V
    • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
    • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2A, 20V
    • Vgs(th) (Max) @ Id: 2.4V @ 100µA
    • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
    • Technology: SiCFET (Silicon Carbide)
    • Power Dissipation (Max): 69W (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 20V
    • Vgs (Max): +25V, -10V
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  • CAS300M17BM2
    MOSFET 2N-CH 1700V 325A MODULE
    Cree/Wolfspeed
    • Manufacturer: Cree/Wolfspeed
    • Series: Z-Rec®
    • Mounting Type: Chassis Mount
    • Operating Temperature: -40°C ~ 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • FET Type: 2 N-Channel (Half Bridge)
    • FET Feature: Silicon Carbide (SiC)
    • Drain to Source Voltage (Vdss): 1700V (1.7kV)
    • Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
    • Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
    • Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
    • Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
    • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
    • Power - Max: 1760W
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