-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
C4H2327N110AZ | C4H2327N110AZ/DFN 6.5X7.0/REELDP | Ampleon USA Inc. | 6-DFN (7x6.5) | 2.3GHz ~ 2.69GHz | 50V | 6-VDFN Exposed Pad | 15dB | ||||
C4H2327N55PZ | C4H2327N55PZ/DFN-7X6.5-6-1/REELD | Ampleon USA Inc. | 6-DFN (7x6.5) | 50W | 2.3GHz ~ 2.69GHz | 150V | 6-VDFN Exposed Pad | GaN | 19.6dB | 50V | 30mA |
- 10
- 15
- 50
- 100