-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BLM9D2325-20ABZ | RF MOSFET LDMOS SOT1462-1 | Ampleon USA Inc. | 20-PQFN (8x8) | 20W | 2.3GHz ~ 2.5GHz | 28V | 20-QFN Exposed Pad | LDMOS | |||||
BLM10D3438-35ABZ | BLM10D3438-35AB/SOT1462/REELDP | Ampleon USA Inc. | 20-PQFN (8x8) | 3.4GHz ~ 3.8GHz | 65V | 1.4µA | 20-QFN Exposed Pad | LDMOS | 33dB | 26V | 41 mA | ||
BLM10D2327-40ABZ | BLM10D2327-40AB/SOT1462/REELDP | Ampleon USA Inc. | 20-PQFN (8x8) | 2.5GHz ~ 2.7GHz | 65V | 1.4µA | 20-QFN Exposed Pad | LDMOS | 28dB | 28V | 46 mA | ||
BLM9D2527-20ABZ | RF MOSFET LDMOS SOT1462-1 | Ampleon USA Inc. | 20-PQFN (8x8) | 20W | 2.5GHz ~ 2.7GHz | 28V | 20-QFN Exposed Pad | LDMOS | |||||
BLM9D1822-30BZ | BLM9D1822-30B/SOT1462/REELDP | Ampleon USA Inc. | 20-PQFN (8x8) | 45.9dBm | 1.8GHz ~ 2.2GHz | 65V | 1.4µA | 20-QFN Exposed Pad | LDMOS (Dual) | 29.3dB | 28V | 110mA | |
B10G3741N55DZ | IC 28V LDMOS RF SOT1462-1 | Ampleon USA Inc. | 20-PQFN (8x8) | 20-QFN Exposed Pad | |||||||||
BLM9D2327-25BZ | RF MOSFET LDMOS SOT1462-1 | Ampleon USA Inc. | 20-PQFN (8x8) | 25W | 2.3GHz ~ 2.7GHz | 28V | 20-QFN Exposed Pad | LDMOS | |||||
BLM10D3740-35ABZ | BLM10D3740-35AB/SOT1462/REELDP | Ampleon USA Inc. | 20-PQFN (8x8) | 3.7GHz ~ 4GHz | 65V | 1.4µA | 20-QFN Exposed Pad | LDMOS | 34.2dB | 28V | 42mA | BLM | |
BLM9D2327-26BZ | BLM9D2327-26B/SOT1462/REELDP | Ampleon USA Inc. | 20-PQFN (8x8) | 44.9dBm | 2.3GHz ~ 2.7GHz | 28V | 1.4µA | 20-QFN Exposed Pad | LDMOS | 27dB | 28V | 76mA | |
BLM8D1822-25BZ | RF MOSFET LDMOS SOT1462-1 | Ampleon USA Inc. | 20-PQFN (8x8) | 25W | 1.8GHz ~ 2.2GHz | 28V | 20-QFN Exposed Pad | LDMOS |
- 10
- 15
- 50
- 100