-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Current Rating (Amps)
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|---|
BLF6G10S-45K,112 | RF FET LDMOS 65V 23DB SOT608B | Ampleon USA Inc. | CDFM2 | 1W | 922.5MHz ~ 957.5MHz | 65V | 13A | SOT-608B | LDMOS | 23dB | 28V | 350mA |
BLF6G10-45,112 | RF FET LDMOS 65V 22.5DB SOT608A | Ampleon USA Inc. | CDFM2 | 1W | 922.5MHz ~ 957.5MHz | 65V | 13A | SOT-608A | LDMOS | 22.5dB | 28V | 350mA |
BLP25M705Z | RF FET LDMOS 65V 16DB 12VDFN | Ampleon USA Inc. | 12-HVSON (6x4) | 1W | 2.14GHz | 65V | 12-VDFN Exposed Pad | LDMOS | 16dB | 28V | 55mA | |
BLF6G10S-45,112 | RF FET LDMOS 65V 23DB SOT608B | Ampleon USA Inc. | CDFM2 | 1W | 922.5MHz ~ 957.5MHz | 65V | 13A | SOT-608B | LDMOS | 23dB | 28V | 350mA |
BLF6G10S-45K,118 | RF FET LDMOS 65V 23DB SOT608B | Ampleon USA Inc. | CDFM2 | 1W | 922.5MHz ~ 957.5MHz | 65V | 13A | SOT-608B | LDMOS | 23dB | 28V | 350mA |
BLF6G10-45,135 | RF FET LDMOS 65V 22.5DB SOT608A | Ampleon USA Inc. | CDFM2 | 1W | 922.5MHz ~ 957.5MHz | 65V | 13A | SOT-608A | LDMOS | 22.5dB | 28V | 350mA |
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