-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Output
|
Frequency
|
Voltage - Rated
|
Package / Case
|
Transistor Type
|
Gain
|
Voltage - Test
|
Current - Test
|
---|---|---|---|---|---|---|---|---|---|---|---|
BLF2425M6L180P,118 | RF FET LDMOS 65V 13.3DB SOT539A | Ampleon USA Inc. | SOT539A | 180W | 2.45GHz | 65V | SOT-539A | LDMOS (Dual), Common Source | 13.3dB | 28V | 10mA |
BLF2425M6L180P,112 | RF FET LDMOS 65V 13.3DB SOT539A | Ampleon USA Inc. | SOT539A | 180W | 2.45GHz | 65V | SOT-539A | LDMOS (Dual), Common Source | 13.3dB | 28V | 10mA |
BLF2425M6LS180P,11 | RF FET LDMOS 65V 13.3DB SOT539B | Ampleon USA Inc. | SOT539B | 180W | 2.45GHz | 65V | SOT-539B | LDMOS (Dual), Common Source | 13.3dB | 28V | 10mA |
BLF2425M6LS180P:11 | RF FET LDMOS 65V 13.3DB SOT539B | Ampleon USA Inc. | SOT539B | 180W | 2.45GHz | 65V | SOT-539B | LDMOS (Dual), Common Source | 13.3dB | 28V | 10mA |
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