-
- Package / Case
- Transistor Type
- Technology
- Operating Temperature
- FET Type
- Gain
- Noise Figure
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Voltage - Test
- Current - Test
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Series
Partnumber | Description | Manufacturer
|
Supplier Device Package
|
Power - Max
|
Mounting Type
|
Package / Case
|
Operating Temperature
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Vgs(th) (Max) @ Id
|
Input Capacitance (Ciss) (Max) @ Vds
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ALD1105PBL | MOSFET 2N/2P-CH 10.6V 14DIP | Advanced Linear Devices Inc. | 14-PDIP | 500mW | Through Hole | 14-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N and 2 P-Channel Matched Pair | 10.6V | Standard | 500Ohm @ 5V | 1V @ 1µA | 3pF @ 5V | |
ALD1107PBL | MOSFET 4P-CH 10.6V 14DIP | Advanced Linear Devices Inc. | 14-PDIP | 500mW | Through Hole | 14-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 P-Channel, Matched Pair | 10.6V | Standard | 1800Ohm @ 5V | 1V @ 1µA | 3pF @ 5V | |
ALD1106PBL | MOSFET 4N-CH 10.6V 14DIP | Advanced Linear Devices Inc. | 14-PDIP | 500mW | Through Hole | 14-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 4 N-Channel, Matched Pair | 10.6V | Standard | 500Ohm @ 5V | 1V @ 1µA | 3pF @ 5V | |
ALD1103PBL | MOSFET 2N/2P-CH 10.6V 14DIP | Advanced Linear Devices Inc. | 14-PDIP | 500mW | Through Hole | 14-DIP (0.300", 7.62mm) | 0°C ~ 70°C (TJ) | 2 N and 2 P-Channel Matched Pair | 10.6V | 40mA, 16mA | Standard | 75Ohm @ 5V | 1V @ 10µA | 10pF @ 5V |
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