- Current - Collector (Ic) (Max)
- Voltage - Collector Emitter Breakdown (Max)
- Power - Max
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Transistor Type
|
Operating Temperature
|
Supplier Device Package
|
Vce Saturation (Max) @ Ib, Ic
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZTX651STOA | TRANS NPN 60V 2A E-LINE | Diodes Incorporated | E-Line-3, Formed Leads | 2A | 60V | 1W | Through Hole | NPN | -55°C ~ 200°C (TJ) | E-Line (TO-92 compatible) | 500mV @ 200mA, 2A | 100nA (ICBO) | 175MHz | ||
| LS352 SOIC 8L | TIGHTLY MATCHED, MONOLITHIC DUAL | Linear Integrated Systems, Inc. | 8-SOIC (0.154", 3.90mm Width) | 10mA | 60V | 500mW | Surface Mount | 2 PNP (Dual) | 150°C (TJ) | 8-SOIC | 500mV @ 100µA, 1mA | 200pA (ICBO) | 200 @ 1mA, 5V | 200MHz | |
| 2N3440L | TRANS NPN 250V 1A TO5 | Microchip Technology | TO-205AA, TO-5-3 Metal Can | 1A | 250V | 800mW | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-5 | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | ||
| 2C5001 | POWER BJT | Microchip Technology | |||||||||||||
| 2N5327 | POWER BJT | Microchip Technology | |||||||||||||
| PBSS4160T,215 | TRANS NPN 60V 1A TO236AB | Nexperia USA Inc. | TO-236-3, SC-59, SOT-23-3 | 1A | 60V | 400mW | Surface Mount | NPN | 150°C (TJ) | TO-236AB | 250mV @ 100mA, 1A | 100nA | 200 @ 500mA, 5V | 220MHz | |
| NMBT3904235 | SMALL SIGNAL BIPOLAR TRANSISTOR | NXP USA Inc. | |||||||||||||
| MJD32C1 | TRANSISTOR | onsemi | |||||||||||||
| 2N5401TA | TRANS PNP 150V 0.6A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 600mA | 150V | 625mW | Through Hole | PNP | -55°C ~ 150°C (TJ) | TO-92-3 | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 400MHz | |
| NSS20101JT1G | TRANS NPN 20V 1A SC89-3 | onsemi | SC-89, SOT-490 | 1A | 20V | 300mW | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SC-89-3 | 220mV @ 100mA, 1A | 100nA (ICBO) | 200 @ 100mA, 2V | 350MHz | |
| PN3569 | TRANS NPN 40V 0.5A TO92-3 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 500mA | 40V | 625mW | Through Hole | NPN | -55°C ~ 150°C (TJ) | TO-92-3 | 250mV @ 15mA, 150mA | 50nA (ICBO) | 100 @ 150mA, 1V | ||
| BC850C-AU_R1_000A1 | TRANS NPN 45V 0.1A SOT23 | Panjit International Inc. | TO-236-3, SC-59, SOT-23-3 | 100mA | 45V | 330mW | Surface Mount | NPN | -55°C ~ 150°C (TJ) | SOT-23 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | ||
| BD14010S | POWER BIPOLAR TRANSISTOR, PNP | Rochester Electronics, LLC | TO-225AA, TO-126-3 | 1.5A | 80V | 1.25W | Through Hole | PNP | 150°C (TJ) | TO-126-3 | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | ||
| D9360-T-AZ | 2SD9360 BIPOLAR TRANSISTOR | Rochester Electronics, LLC | |||||||||||||
| 2SA1020A,NSEIKIF(J | TRANS PNP 50V 2A TO92MOD | Toshiba Semiconductor and Storage | TO-226-3, TO-92-3 Long Body | 2A | 50V | 900mW | Through Hole | PNP | 150°C (TJ) | TO-92MOD | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 100MHz |
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