Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.8A Pmax 900mW
-
- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
-
- Manufacturer: Nexperia USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
- Power - Max: 900mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.8A
- Voltage - Collector Emitter Breakdown (Max): 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
Info from the market- Total warehouses:
- Total offers:
- Offers with a price:
- Offers in stock:
- 10
- 15
- 50
- 100