Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.2A Pmax 625mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 53
  • 2N5307
    TRANS NPN DARL 40V 1.2A TO92-3
    Fairchild Semiconductor
    • Manufacturer: Fairchild Semiconductor
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • 2N5308_D27Z
    TRANS NPN DARL 40V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • MPSA12_D26Z
    TRANS NPN DARL 20V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
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  • 2N5307
    TRANS NPN DARL 40V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • 2N5308
    TRANS NPN DARL 40V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • BC517-D74Z
    TRANS NPN DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • MPSA14_D27Z
    TRANS NPN DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • BC517_L34Z
    TRANS NPN DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • MPSA65_D26Z
    TRANS PNP DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • MPSA14_D74Z
    TRANS NPN DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • MPSA63_D27Z
    TRANS PNP DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: PNP - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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  • MPSA12_D74Z
    TRANS NPN DARL 20V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
    • Current - Collector Cutoff (Max): 100nA
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  • 2N5306
    TRANS NPN DARL 25V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 25V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
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  • 2N6427_D75Z
    TRANS NPN DARL 40V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
    • Current - Collector Cutoff (Max): 1µA
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  • MPSA13_D27Z
    TRANS NPN DARL 30V 1.2A TO92-3
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 625mW
    • Transistor Type: NPN - Darlington
    • Current - Collector (Ic) (Max): 1.2A
    • Voltage - Collector Emitter Breakdown (Max): 30V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 125MHz
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