Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 150mA Pmax 500mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 33
  • FMMT558TA
    TRANS PNP 400V 0.15A SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 400V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 50MHz
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  • 2PC1815Y,412
    TRANS NPN 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2PC1815GR,116
    TRANS NPN 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2PC1815Y,126
    TRANS NPN 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2PA1015Y,126
    TRANS PNP 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2SC536NF-NPA-AT
    SMALL SIGNAL BIPOLAR TRANSISTOR
    Rochester Electronics, LLC
    • Manufacturer: Rochester Electronics, LLC
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-226AA
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
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  • KTC3198-GR B1G
    TRANSISTOR, NPN, 50V, 0.15A, 120
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2PC1815GR,126
    TRANS NPN 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • FMMT560TA
    TRANS PNP 500V 0.15A SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 60MHz
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  • KTC3198-O A1G
    TRANSISTOR, NPN, 50V, 0.15A, 200
    Taiwan Semiconductor Corporation
    • Manufacturer: Taiwan Semiconductor Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • 2PC1815BL,126
    TRANS NPN 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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  • FMMT560QTC
    SS HI VOLTAGE TRANSISTOR SOT23 T
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Series: Automotive, AEC-Q101
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 60MHz
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  • FMMT560QTA
    TRANS PNP 500V 0.15A SOT23-3
    Diodes Incorporated
    • Manufacturer: Diodes Incorporated
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 500V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
    • Current - Collector Cutoff (Max): 100nA
    • Frequency - Transition: 60MHz
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  • 2SC536NG-NPA-AT
    TRANS NPN 50V 0.15A TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
    • Supplier Device Package: TO-92 (TO-226)
    • Power - Max: 500mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 1mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 200MHz
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  • 2PA1015GR,126
    TRANS PNP 50V 0.15A TO92-3
    NXP USA Inc.
    • Manufacturer: NXP USA Inc.
    • Mounting Type: Through Hole
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • Power - Max: 500mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 150mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 80MHz
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