Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 200mA Pmax 480mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 1
  • PMBT3904RAZ
    PMBT3904RA/SOT1268/DFN1412-6
    Nexperia USA Inc.
    • Manufacturer: Nexperia USA Inc.
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: 6-XFDFN Exposed Pad
    • Supplier Device Package: DFN1412-6
    • Power - Max: 480mW
    • Transistor Type: 2 NPN (Dual)
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 40V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 50nA (ICBO)
    • Frequency - Transition: 300MHz
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100