Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 200mA Pmax 360mW

    • Supplier Device Package
    • Vce Saturation (Max) @ Ib, Ic
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Series
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List Table
Found: 35
  • JANTX2N3250A
    TRANS PNP 60V 0.2A TO-39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • BFN26E6327HTSA1
    TRANS NPN 300V 0.2A SOT23
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Power - Max: 360mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 70MHz
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  • JANTX2N3250AUB
    TRANS PNP 60V 0.2A UB
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: UB
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • 2N3251A
    TRANS PNP 60V 0.2A TO39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • JANTXV2N3250A
    TRANS PNP 60V 0.2A TO39
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • 2N2369A
    TRANS NPN 15V 0.2A TO18
    STMicroelectronics
    • Manufacturer: STMicroelectronics
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 360mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 400nA
    • Frequency - Transition: 675MHz
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  • 2N3250A
    TRANS PNP 60V 0.2A TO18
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • BFN27E6327HTSA1
    TRANS PNP 300V 0.2A SOT23
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 300V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Frequency - Transition: 100MHz
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  • JAN2N3250AUB/TR
    TRANS PNP 60V 0.2A UB
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: UB
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • JAN2N3250A
    TRANS PNP 60V 0.2A TO-39
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Supplier Device Package: TO-39 (TO-205AD)
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • JANTX2N3250AUB/TR
    TRANS PNP 60V 0.2A UB
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: UB
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • JAN2N3251AUB
    TRANS PNP 60V 0.2A UB
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 3-SMD, No Lead
    • Supplier Device Package: UB
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • JAN2N3250AUB
    TRANS PNP 60V 0.2A UB
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Series: Military, MIL-PRF-19500/323
    • Mounting Type: Surface Mount
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: 4-SMD, No Lead
    • Supplier Device Package: UB
    • Power - Max: 360mW
    • Transistor Type: PNP
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 60V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
    • Current - Collector Cutoff (Max): 10µA (ICBO)
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  • 2N3013
    TRANS NPN 15V 0.2A TO18
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 360mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
    • Current - Collector Cutoff (Max): 300nA
    • Frequency - Transition: 350MHz
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  • 2N4137
    TRANS 20V 0.2A TO18
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 200°C (TJ)
    • Package / Case: TO-206AA, TO-18-3 Metal Can
    • Supplier Device Package: TO-18
    • Power - Max: 360mW
    • Current - Collector (Ic) (Max): 200mA
    • Voltage - Collector Emitter Breakdown (Max): 20V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
    • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
    • Current - Collector Cutoff (Max): 400nA
    • Frequency - Transition: 500MHz
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