Semiconductors, Transistors, Transistors - Bipolar (BJT) - Single IC(MAX) 1.5A Pmax 3.2W
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- Supplier Device Package
- Vce Saturation (Max) @ Ib, Ic
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Series
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- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
- Power - Max: 3.2W
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
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